RN2117(TE85L,F)

RN2117(TE85L,F)

$0.25
  • Description:TRANS PREBIAS PNP 50V 0.1A SSM
  • Series:-

SKU:baf58ad58fc5 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SSM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SSM

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RN2117(TE85L,F)

Part Context

The RN2117(TE85L,F) is a dual bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with internal biasing resistors into a single surface-mount package. This component belongs to the RN series of digital transistors, designed to simplify circuit design by reducing the number of external components required for switching applications.

RN2117(TE85L,F)RN2117(TE85L,F)
$0.25
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