RN2118MFV(TPL3)

Overview

The RN2118MFV(TPL3) is a silicon PNP epitaxial type bias resistor built-in transistor from Toshiba. It integrates a single NPN transistor with internal bias resistors R1 and R2, having typical values of 47 kΩ and 10 kΩ respectively. The device features a collector-emitter voltage (VCEO) rating of 50 V and a continuous collector current (IC) capacity of 100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 50 at IC = 10 mA, a transition frequency (fT) of 200 MHz, and a collector power dissipation (PC) of 100 mW.

Feature Summary

• Integrates a PNP transistor with built-in bias resistors to simplify circuit design and reduce component count.
• Designed for switching, inverter, interface, and driver circuit applications.
• Provides complementary functionality to the RN1107 to RN1109 series.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape/reel specifications. Ensure compliance with RoHS directives and check for AEC-Q101 automotive qualification status if required for the target application environment.

Selection Notes

Select this component when a PNP digital transistor with a high input resistance ratio is needed. The 47 kΩ input resistor suits applications requiring lower base drive currents compared to lower-resistance variants in the RN2114-2117 series.

Part Context

This part belongs to the RN211x family of Bias Resistor Built-in Transistors (Digital Transistors). These devices are designed to replace discrete transistor and resistor networks, offering space savings and simplified manufacturing processes in surface-mount designs.

Replacement Considerations

RN1118MFV serves as the direct NPN complementary counterpart within the same product family.