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The RN2118(T5L,F,T) is a single PNP epitaxial planar transistor with built-in bias resistors, manufactured by Toshiba Semiconductor and Storage. It features a collector-emitter voltage of 50V, a collector current of 100mA, and a power dissipation of 100mW. The internal resistor configuration consists of R1 at 47kΩ and R2 at 10kΩ. Electrical characteristics include a DC current gain (hFE) of 50 minimum at 10mA/5V, a transition frequency of 200MHz, and a collector-emitter saturation voltage of 300mV maximum at 5mA/0.25mA.
Verify the specific ordering suffix against official documentation to confirm packaging type and tape-and-reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure the component meets environmental regulations applicable to the target market.
Select this component when a high-value input resistance ratio is required for base drive applications. The 4.7kΩ equivalent input impedance suits interfaces requiring lower base currents compared to standard transistors. Verify that the 50V collector-emitter rating aligns with the system's maximum operating voltage limits.
This device belongs to the RN2114 through RN2118 series of pre-biased transistors. It serves as the complementary counterpart to the NPN RN1107 through RN1109 series. The part utilizes Toshiba's PCT process technology for improved switching characteristics and reliability in surface-mount applications.
Complementary designs may utilize the RN1118 series. Direct pin-compatible replacements within the same family include RN2114, RN2115, RN2116, and RN2117, though their internal resistor values differ significantly.