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The RN2119MFV,L3F is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal biasing resistors in a compact SOT-723 (VESM) surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a power dissipation rating of 150 mW. It features a typical input resistance of 1 kOhm and a minimum DC current gain (hFE) of 120. Qualified under AEC-Q101 standards for automotive reliability, it operates at temperatures up to +150°C.
Verify the specific suffix L3F against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure the ordering part number matches the exact electrical characteristics required for the target application circuit design.
Select this component when a single NPN switch with a 1 kOhm base input resistance is required. Compare the 100 mA current limit and 50 V voltage rating against load requirements. Consider the SOT-723 footprint constraints and thermal dissipation limits relative to the available board space and ambient temperature conditions.
This part belongs to the RN series of Bias Resistor Built-in Transistors from Toshiba. These devices are designed to replace discrete transistor and resistor networks, simplifying circuit design. The RN2119 variant specifically provides a 1 kOhm input resistance, distinguishing it from other series members with different resistance values.
Cross-reference with other Toshiba RN series parts or equivalent digital transistors from manufacturers like ROHM or ON Semiconductor that offer matching 50V/100mA ratings and SOT-723 packages. Verify pinout compatibility and hFE ranges before substitution.