RN2119MFV,L3F

RN2119MFV,L3F

$0.13
  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-

SKU:6d2145c73699 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:-
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VESM

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RN2119MFV,L3F

Overview

The RN2119MFV,L3F is a single NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal biasing resistors in a compact SOT-723 (VESM) surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a power dissipation rating of 150 mW. It features a typical input resistance of 1 kOhm and a minimum DC current gain (hFE) of 120. Qualified under AEC-Q101 standards for automotive reliability, it operates at temperatures up to +150°C.

Feature Summary

  • Integrates NPN transistor with built-in bias resistors to reduce external component count and PCB space.
  • AEC-Q101 qualified for high reliability in automotive electronic systems.
  • Compact SOT-723 surface-mount package designed for automated assembly.

Applications

  • Automotive system control circuits
  • General-purpose switching applications
  • Driver circuits for small loads

Procurement Notes

Verify the specific suffix L3F against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure the ordering part number matches the exact electrical characteristics required for the target application circuit design.

Selection Notes

Select this component when a single NPN switch with a 1 kOhm base input resistance is required. Compare the 100 mA current limit and 50 V voltage rating against load requirements. Consider the SOT-723 footprint constraints and thermal dissipation limits relative to the available board space and ambient temperature conditions.

Part Context

This part belongs to the RN series of Bias Resistor Built-in Transistors from Toshiba. These devices are designed to replace discrete transistor and resistor networks, simplifying circuit design. The RN2119 variant specifically provides a 1 kOhm input resistance, distinguishing it from other series members with different resistance values.

Replacement Considerations

Cross-reference with other Toshiba RN series parts or equivalent digital transistors from manufacturers like ROHM or ON Semiconductor that offer matching 50V/100mA ratings and SOT-723 packages. Verify pinout compatibility and hFE ranges before substitution.

RN2119MFV,L3FRN2119MFV,L3F
$0.13
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