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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
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Overview
The RN2119MFV(TPL3) is a single NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a bias resistor network within a compact SOT-723 (VESM) surface-mount package. The device features a collector-emitter maximum voltage of 50 V and a continuous collector current rating of 100 mA. A typical base input resistance of 1 kOhm is included for direct logic interface compatibility. The component supports a maximum power dissipation of 150 mW and operates at temperatures up to +150°C. It meets AEC-Q101 automotive qualification standards, ensuring reliability in demanding electronic environments.
Feature Summary
- Integrated bias resistor network simplifies circuit design by eliminating external components.
- AEC-Q101 qualified for enhanced reliability in automotive applications.
- Compact SOT-723 package optimizes board space utilization.
Applications
- Automotive electronic control units
- General-purpose switching circuits
- Logic level translation interfaces
Procurement Notes
Verify the specific suffix TPL3 against official Toshiba documentation to confirm tape-and-reel specifications and lot traceability requirements. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and compliance with automotive quality standards.
Selection Notes
Select this component when an NPN configuration with low input resistance is required for high-speed switching. Compare against similar models like RN1119MFV if different resistance ratios are needed. Confirm that the 50V breakdown voltage and 100mA current limits align with the target circuit's operational parameters.
Part Context
This part belongs to the RN1119 series of bias resistor built-in transistors. It shares the same internal topology as other variants in the family but differs in packaging or reel specifications indicated by the suffix. The series is designed for replacing multiple discrete components in digital logic applications.
Replacement Considerations
Direct substitutes include RN1119MFV,L3F for identical electrical performance in standard reels. Verify pinout compatibility before swapping with other SOT-723 NPN digital transistors from different manufacturers.
