ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A VESM
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：-
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VESM
Download product information
Overview
The RN2130MFV,L3F is a bias resistor built-in transistor (digital transistor) manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with a single base bias resistor (R1). The device is rated for a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. The internal resistor value is typically 47 kOhms. It is housed in a compact SOT-723 surface-mount package, also designated as VESM, designed for low-power applications requiring simplified circuit design.
Feature Summary
- Integrates an NPN transistor with a built-in bias resistor to reduce external component count
- Designed for high-speed switching applications with simplified biasing requirements
- Utilizes a small SOT-723 surface-mount package for efficient board space utilization
Applications
- General-purpose switching circuits
- Driver circuits for logic interfaces
- Biasing networks in portable electronic devices
Procurement Notes
Verify the specific ordering suffix L3F to confirm packaging configuration, such as cut tape or reel quantities, against official distributor catalogs. Ensure compatibility with AEC-Q101 qualification if automotive-grade reliability is required for the target application environment.
Selection Notes
Select this component when a single-resistor bias configuration is sufficient for the NPN switching requirement. Compare the 47 kOhm internal resistance against circuit drive capabilities to ensure adequate base current. Consider the SOT-723 thermal dissipation limits relative to the expected power load.
Part Context
This part belongs to Toshiba's RN series of digital transistors, which are designed to replace discrete resistor-transistor combinations. The RN2130 variant specifically provides an NPN configuration with one integrated resistor, distinguishing it from dual-resistor models like the RN21xx series.
Replacement Considerations
Direct substitutes include other NPN digital transistors with similar 50V/100mA ratings and ~47kOhm base resistors in SOT-723 packages, such as those from ON Semiconductor or ROHM, provided pinout and electrical characteristics match.
