RN2131MFV,L3F

Overview

The RN2131MFV,L3F is a PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN BJT with a base resistor (R1) of 100 kOhms in a compact SOT-723 (VESM) surface-mount package. The device supports a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA, with a maximum power dissipation of 150 mW. It features a minimum DC current gain (hFE) of 120 at Ic=1mA and Vce=5V, and a maximum saturation voltage of 300 mV at Ib=500µA and Ic=5mA. The component is qualified under AEC-Q101 standards for automotive reliability.

Feature Summary

• Integrates a pre-biased PNP transistor with an internal base resistor to simplify circuit design and reduce component count.
• Automotive-grade qualification ensures reliability and performance consistency for demanding vehicle applications.
• Compact SOT-723 surface-mount packaging facilitates high-density PCB layout and automated assembly processes.

Applications

• Automotive electronic control units requiring signal switching or level shifting
• General-purpose digital logic interface circuits
• Battery management systems within vehicle architectures

Procurement Notes

Verify the specific ordering suffix L3F against the manufacturer's latest datasheet to confirm tape-and-reel specifications and marking codes. Ensure the procurement channel provides traceability documentation required for AEC-Q101 qualified components. Cross-reference the full part number with official Toshiba Semiconductor and Storage catalogs to avoid counterfeit risks and confirm current production status before finalizing purchase orders.

Selection Notes

Select this component when a PNP configuration with a 100 kOhm base resistance is required for driving loads up to 100 mA. The 50 V breakdown voltage suits low-voltage digital interfaces. Consider the SOT-723 footprint constraints during PCB layout. Verify thermal management requirements against the 150 mW power dissipation limit in the intended operating environment.

Part Context

This part belongs to Toshiba's RN21xx series of bias resistor built-in transistors. These devices are designed to replace discrete resistor-transistor combinations, offering space savings and improved switching characteristics. The RN2131 variant specifically denotes the PNP polarity with a 100 kOhm input resistor, distinguishing it from other ratios or polarities in the same family.

Replacement Considerations

Check for direct cross-reference models from Toshiba with identical electrical parameters and pinout compatibility. Verify that any substitute maintains AEC-Q101 qualification if used in automotive contexts. Confirm that the replacement package matches the SOT-723 dimensions to ensure mechanical fit without redesigning the PCB land pattern.