RN2132MFV,L3F

RN2132MFV,L3F

$0.13
  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-

SKU:d286b4340043 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A VESM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):200 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:-
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VESM

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RN2132MFV,L3F

Overview

The RN2132MFV,L3F is a PNP bias resistor built-in transistor (digital transistor) manufactured by Toshiba Semiconductor and Storage. It integrates a single base resistor (R1) with a PNP bipolar junction transistor in a compact surface-mount package. The device features a maximum collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. The internal base resistor value is typically 47 kOhms. It operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 150 mW. The component is housed in the SOT-723 (VESM) package, designed for efficient space utilization in modern electronic circuits.

Feature Summary

  • Integrates a PNP transistor with a single internal base resistor to simplify circuit design and reduce component count.
  • Optimized for low-power applications with a maximum power dissipation of 150 mW.
  • Utilizes the compact SOT-723 (VESM) surface-mount package for high-density PCB layouts.

Applications

  • Switching applications in portable devices such as mobile phones and tablets.
  • Level shifting and buffer circuits in digital logic interfaces.
  • Load switching and driver circuits for small-signal control in consumer electronics.

Procurement Notes

Verify the complete part number including the suffix L3F to ensure correct packaging configuration. Confirm RoHS compliance and AEC-Q101 qualification status if automotive application requirements are necessary. Cross-reference the manufacturer's latest datasheet for any updates on reliability test reports or recommended soldering profiles specific to the VESM package.

Selection Notes

Select this component when a PNP digital transistor with a 47 kOhm base resistor is required. Ensure the circuit design accommodates the 50 V maximum voltage rating and 100 mA current limit. Consider the thermal performance given the 150 mW power dissipation constraint in the SOT-723 package. Compare hFE characteristics at specific operating points against alternative models if precise gain control is critical.

Part Context

This component belongs to Toshiba's RN series of bias resistor built-in transistors. The 'RN' prefix indicates a digital transistor, while '21' denotes a PNP configuration with a single base resistor. The '32' suffix typically specifies the resistance value code, corresponding to 47 kOhms in this series. The MFV,L3F suffix identifies the specific SOT-723 package and tape-and-reel packaging format.

Replacement Considerations

Potential substitutes include other PNP digital transistors with similar 47 kOhm base resistance and 50 V/100 mA ratings from manufacturers like ROHM or ON Semiconductor. Verify pinout compatibility and electrical parameters such as Vce(sat) and hFE before substitution. Common alternatives may include parts from the BC84x or MMBT series families, though package differences must be addressed.

RN2132MFV,L3FRN2132MFV,L3F
$0.13
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