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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SC70
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
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Overview
The RN2301,LF is a digital transistor manufactured by Toshiba Semiconductor and Storage. It features an NPN transistor integrated with a single base resistor in a compact surface-mount package. The device provides a typical input resistance of 10 kΩ and supports a maximum collector-emitter voltage (VCEO) of 50 V. It operates within a temperature range of -55°C to +150°C and offers a minimum DC current gain (hFE) of 100 at a collector current of 5 mA. The component is RoHS compliant and designed for use in switching applications requiring high reliability and low power consumption.
Feature Summary
- Integrated NPN transistor with built-in base resistor for simplified circuit design
- High thermal stability supporting operation up to 150°C junction temperature
- Compact SOT-323 package suitable for space-constrained PCB layouts
Applications
- General-purpose switching circuits
- Driver stages for logic interfaces
- Battery protection circuits
Procurement Notes
Verify the specific ordering code suffix to ensure compliance with environmental directives such as RoHS. Confirm that the 'LF' designation indicates lead-free composition consistent with current manufacturing standards. Cross-reference the manufacturer's latest datasheet revision to validate electrical characteristics against your design requirements before finalizing procurement.
Selection Notes
Select this component when a pre-biased NPN transistor is required to reduce external component count. Ensure the application voltage does not exceed the 50 V VCEO rating. Consider the SOT-323 footprint constraints during layout. Verify that the 10 kΩ internal base resistance aligns with the drive signal capabilities of the preceding logic stage.
Part Context
The RN2301 belongs to Toshiba’s RN series of bias-equipped transistors. This series integrates resistors directly onto the silicon die or within the package to simplify biasing networks. The RN2301 specifically denotes an NPN configuration with a single base resistor, distinguishing it from PNP variants or dual-resistor models within the same family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Toshiba’s official replacement guide or distributor cross-reference tools for verified equivalents.
