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The RN2303,LF is a PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP epitaxial planar silicon transistor with two internal bias resistors (R1 and R2) into an SC-70 surface-mount package. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal resistance values are typically 10 kOhms for both the base resistor (R1) and emitter-base resistor (R2). Key electrical characteristics include a DC current gain (hFE) of at least 50 at 10 mA and 5 V, a saturation voltage of 300 mV max at 250 µA base current and 5 mA collector current, and a transition frequency of 200 MHz. Power dissipation is rated at 100 mW.
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging type and compliance status. Ensure the requested part number matches the exact electrical specifications required for the target application. Confirm RoHS3 compliance and moisture sensitivity level requirements prior to procurement.
Select this component when a PNP configuration with integrated biasing is required in an SC-70 footprint. Compare internal resistor values against the specific drive requirements of the load. Verify that the 100 mA current rating and 50 V voltage rating exceed the maximum operational stresses of the intended circuit.
The RN2303,LF belongs to Toshiba's family of Bias Resistor Built-In Transistors (BRTs). These devices combine bipolar junction transistors with on-chip resistors to replace discrete resistor-transistor networks. This integration reduces assembly costs and PCB area while improving reliability through fewer solder joints.
Publicly confirmed substitute part numbers for RN2303,LF were not found in the provided source material. Cross-reference with other manufacturers' PNP BRTs in SC-70 packages only if pinout and electrical parameters are verified identical via official datasheets.