RN2303,LF

RN2303,LF

$0.13
  • Description:TRANS PREBIAS PNP 50V 0.1A SC70
  • Series:-

SKU:614f5a29738c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SC70
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:100 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70

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RN2303,LF

Overview

The RN2303,LF is a PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP epitaxial planar silicon transistor with two internal bias resistors (R1 and R2) into an SC-70 surface-mount package. The device features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Internal resistance values are typically 10 kOhms for both the base resistor (R1) and emitter-base resistor (R2). Key electrical characteristics include a DC current gain (hFE) of at least 50 at 10 mA and 5 V, a saturation voltage of 300 mV max at 250 µA base current and 5 mA collector current, and a transition frequency of 200 MHz. Power dissipation is rated at 100 mW.

Feature Summary

  • Integrates a PNP transistor with dual bias resistors to simplify circuit design and reduce component count.
  • Utilizes an SC-70 surface-mount package for compact board space utilization.
  • Designed for high-speed switching applications with a 200 MHz transition frequency.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging type and compliance status. Ensure the requested part number matches the exact electrical specifications required for the target application. Confirm RoHS3 compliance and moisture sensitivity level requirements prior to procurement.

Selection Notes

Select this component when a PNP configuration with integrated biasing is required in an SC-70 footprint. Compare internal resistor values against the specific drive requirements of the load. Verify that the 100 mA current rating and 50 V voltage rating exceed the maximum operational stresses of the intended circuit.

Part Context

The RN2303,LF belongs to Toshiba's family of Bias Resistor Built-In Transistors (BRTs). These devices combine bipolar junction transistors with on-chip resistors to replace discrete resistor-transistor networks. This integration reduces assembly costs and PCB area while improving reliability through fewer solder joints.

Replacement Considerations

Publicly confirmed substitute part numbers for RN2303,LF were not found in the provided source material. Cross-reference with other manufacturers' PNP BRTs in SC-70 packages only if pinout and electrical parameters are verified identical via official datasheets.

RN2303,LFRN2303,LF
$0.13
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