RN2303,LXHF

Overview

The RN2303,LXHF is a single PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN transistor with internal base resistors in a compact surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (Pd) of 100 mW. The typical input resistance values are R1=47 kΩ and R2=47 kΩ, resulting in a resistor ratio of 1.0. The device features a minimum DC current gain (hFE) of 50 at IC=-10 mA and VCE=-5 V, with a maximum operating frequency of 250 MHz. It is housed in an SSM-3 (SC-70-3) package and complies with AEC-Q101 automotive standards.

Feature Summary

• Integrates a single PNP transistor with dual internal base resistors for simplified circuit design.
• Optimized for high-speed switching applications with a maximum operating frequency of 250 MHz.
• Complies with AEC-Q101 automotive qualification standards for reliability.
• Provides low saturation voltage characteristics suitable for driver and interface circuits.

Applications

• Automotive switch circuits requiring AEC-Q101 compliance.
• Inverter control circuits for motor drives.
• Interface connection circuits between microcontrollers and loads.
• Driver circuits for relays or solenoids.

Procurement Notes

Verify the specific suffix configuration against official Toshiba documentation to ensure correct resistor values and packaging type. Confirm AEC-Q101 automotive qualification status if required for your application. Check lead times and production cycles as they may vary based on manufacturing schedules. Ensure compatibility with your PCB footprint for the SSM-3 package.

Selection Notes

Select this component when a single PNP digital transistor with 47kΩ/47kΩ internal resistors is needed. Compare hFE requirements and VCEO ratings against other models in the RN series. Consider the SSM-3 package size constraints relative to available board space. Verify thermal dissipation capabilities within the 100mW limit for your specific operating conditions.

Part Context

This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors (BRTs). These devices replace discrete transistor-resistor networks, reducing component count and assembly costs. The RN2303 variant specifically offers PNP polarity with standard 47kΩ input resistances, commonly used in general-purpose switching and logic interface applications across industrial and automotive sectors.

Replacement Considerations

Check for direct substitutes such as RN2308,LXHF (NPN version) or other RN23xx variants with different resistor ratios. Verify pinout compatibility for the SSM-3 package before substitution. Ensure equivalent electrical parameters like VCEO, IC, and hFE meet or exceed original design requirements.