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The RN2303(TE85L,F) is a dual NPN bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with associated bias resistors into a single surface-mount package, specifically the US-6 (US6) configuration. This component is designed for switching, inverter, interface, and driver circuits. Key electrical characteristics include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per element. The device features a typical input resistance of 4.7 kOhms with a resistor ratio of 1. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 300mW.
Verify the specific suffix TE85L,F against the manufacturer's latest datasheet to confirm packaging and tape specifications. Ensure compatibility with standard SMD reflow profiles. Check for RoHS compliance status as defined in the official product documentation before finalizing procurement orders.
Select this component when a dual NPN configuration with integrated base biasing is required to save board space. The 4.7 kOhm internal resistance suits general-purpose switching tasks. Compare power dissipation limits and hFE requirements against load conditions to ensure reliable operation within the specified 50V and 100mA ratings.
This part belongs to Toshiba's RN series of bias resistor built-in transistors. These devices are engineered to simplify digital logic interfaces by combining transistor amplification with necessary base drive resistances. The US6 package variant offers a compact footprint suitable for high-density PCB layouts common in modern consumer and industrial electronics.
Consult official cross-reference lists for direct equivalents. Verify pinout compatibility and electrical parameters such as VCEO, IC, and R1 values before substituting with parts from other manufacturers.