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The RN2304,LF is a PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with built-in bias resistors (R1 and R2) in an SC-70 surface-mount package. The device supports a collector-emitter voltage of 50V and a maximum collector current of 100mA. Internal resistor values are specified as 47kΩ for both the base (R1) and emitter (R2). Key electrical characteristics include a DC current gain (hFE) of at least 80 at 10mA and 5V, a saturation voltage of 300mV at 250µA base current and 5mA collector current, and a transition frequency of 200MHz. Maximum power dissipation is rated at 100mW.
Verify the specific suffix LF against official Toshiba documentation to confirm RoHS compliance status. Confirm the SC-70 package designation matches the required footprint. Ensure the 47kΩ internal resistor configuration aligns with the target circuit requirements before procurement.
Select this component when a PNP logic interface or switch is required in space-constrained designs. The integrated 47kΩ resistors eliminate external biasing components. Verify that the 100mA current rating and 50V breakdown voltage meet the load specifications. Compare against complementary NPN models like the RN1404 series for push-pull applications.
This part belongs to the Toshiba RN2xxx series of PNP pre-biased transistors. These devices utilize a PCT process for high reliability. The RN2304 variant specifically pairs with the RN1304 NPN counterpart. The series is designed to replace discrete resistor-transistor combinations in digital logic interfaces.
Publicly confirmed substitute part numbers for the RN2304,LF were not identified in the provided source material. Cross-referencing with other manufacturers requires verifying identical pinout, resistor values, and electrical ratings.