RN2305,LF

$0.13

Description：TRANS PREBIAS PNP 50V 0.1A SC70
Series：-

SKU:d00486c52ff4 Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS PNP 50V 0.1A SC70
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：PNP - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：2.2 kOhms
Resistor - Emitter Base (R2)：47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：200 MHz
Power - Max：100 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70

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RN2305,LF

Overview

The RN2305,LF is a PNP Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP epitaxial transistor with two internal bias resistors: an input resistor of 2.2 kΩ and a base-emitter shunt resistor of 47 kΩ. The device is designed for surface-mount applications in the SC-70 package (SOT-323/USM). Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The component supports a maximum power dissipation of 100 mW at ambient temperature and operates within a standard commercial temperature range.

Feature Summary

Integrates a PNP bipolar transistor with built-in bias resistors to simplify circuit design
Utilizes Toshiba's PCT process for high reliability and stable performance
Eliminates external discrete components, reducing board space and assembly complexity

Applications

Switching circuits
Inverter circuits
Interface circuits
Driver circuits

Procurement Notes

Verify that the specific part number suffix matches the required packaging configuration, as availability may vary between cut tape and full reel formats. Confirm compliance with RoHS directives and AEC-Q101 qualification status if automotive application requirements are necessary. Ensure the ordering documentation explicitly references the LF designation to guarantee the correct lead-free variant is supplied.

Selection Notes

Select this component when a compact PNP switching solution with integrated biasing is required. The fixed 2.2 kΩ and 47 kΩ resistor values suit general-purpose logic interfacing where standard drive levels are sufficient. Consider the 100 mA current limit and 50 V voltage rating to ensure adequate headroom for the target load conditions.

Part Context

The RN2305 belongs to Toshiba’s RN23xx series of Bias Resistor Built-in Transistors. This family utilizes silicon PNP epitaxial type transistors fabricated using the PCT process. The series includes multiple variants differentiated by resistor ratios and configurations, providing standardized solutions for digital switching tasks across consumer and industrial electronics.