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The RN2305,LXHF is a single PNP digital transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a monolithic NPN transistor with internal biasing resistors in an SC-70-3 package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (Pd) of 200 mW. The device features a typical base resistor (R1) of 47 kOhms and an emitter resistor (R2) of 22 kOhms. It meets AEC-Q101 automotive qualification standards and operates within a temperature range of -55°C to +150°C.
Verify the specific ordering code suffix against the manufacturer's latest datasheet to ensure correct resistance values and package type. Confirm AEC-Q101 compliance requirements if deploying in automotive systems. Check for RoHS directive adherence prior to integration into regulated assemblies.
Select this component when a single PNP switch with integrated biasing is required. Ensure the -50 V rating exceeds the maximum circuit voltage. Verify that the 47 kOhm base resistor value provides adequate drive current for the intended load without exceeding the -100 mA collector current limit.
This part belongs to Toshiba's RN series of pre-biased transistors. These devices combine bipolar junction transistors with built-in bias resistors to replace multiple discrete components. The RN2305 variant specifically offers a single PNP configuration optimized for space-constrained designs requiring reliable switching performance.
Consult official cross-reference lists for direct substitutes. Alternative parts must match the PNP polarity, -50 V VCEO rating, -100 mA IC limit, and SC-70-3 footprint. Verify equivalent resistance ratios and thermal characteristics before substitution.