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The RN2305(TE85L,F) is a PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage (Vceo) of 50 V. The device includes an integrated base resistor with a typical value of 47 kOhms. Key electrical specifications include a DC current gain (hFE) of at least 80 at Ic=10mA and Vce=5V, and a saturation voltage (Vce(sat)) of 300 mV at Ic=250μA. The component operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 100 mW.
Verify the specific ordering code suffix to confirm tape and reel packaging configuration. Ensure compatibility with RoHS directives if required by the target market regulations. Cross-reference the manufacturer's latest datasheet for any updates on recommended operating conditions or thermal derating curves prior to finalizing procurement orders.
Select this component when a compact PNP solution with built-in biasing is required. The 47 kOhm internal resistor simplifies drive circuit design compared to discrete transistors. Consider the 100 mA current limit and 50 V voltage rating to ensure adequate headroom for the intended load. The USM package offers space efficiency for dense PCB layouts.
This part belongs to Toshiba's line of pre-biased transistors, which integrate resistors directly onto the silicon die. These devices are designed to replace multiple discrete components, reducing board space and assembly costs. The RN2305 specifically utilizes a PNP configuration suitable for high-side switching or level-shifting tasks in low-power digital systems.
Consult official substitution lists for equivalent pre-biased PNP transistors from Toshiba or other manufacturers. Verify that alternative parts match the 100 mA current, 50 V voltage, and pinout compatibility before implementation.