RN2306,LF

Overview

The RN2306,LF is a pre-biased PNP bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It integrates two resistors: R1=4.7 kΩ and R2=47 kΩ. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of -50 V, a maximum DC collector current (IC) of -100 mA, and a power dissipation (Pd) of 200 mW. The device features a minimum DC current gain (hFE) of 80 and operates within a temperature range of -55°C to +150°C. It is housed in an SMD SC-70 (SOT-323/USM) package and holds AEC-Q101 qualification.

Feature Summary

• Integrates bias resistors (R1=4.7kΩ, R2=47kΩ) to simplify circuit design and reduce component count.
• AEC-Q101 qualified for automotive applications requiring high reliability and extended temperature operation.
• Optimized for switching, inverter circuits, interface connections, and driver circuits.

Applications

• Automotive interface circuits
• Switching applications
• Driver circuits

Procurement Notes

Verify the specific ordering suffix and packaging configuration when sourcing. Confirm that the component meets AEC-Q101 requirements if intended for automotive use. Ensure the SC-70 footprint matches the PCB layout. Check datasheet revisions for any updates to absolute maximum ratings or thermal characteristics prior to final design approval.

Selection Notes

Select this component for PNP switching applications requiring integrated base and emitter biasing. The 4.7 kΩ/47 kΩ resistor combination offers specific input impedance characteristics suitable for standard logic interfaces. Consider the 200 mW power dissipation limit and SC-70 package thermal constraints during thermal management planning for dense PCB layouts.

Part Context

This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors (BRT). These devices combine a single BJT with internal resistors to replace multiple discrete components. The RN2306,LF specifically addresses PNP requirements in compact surface-mount designs, serving as a direct replacement for traditional discrete transistor-resistor networks in space-constrained electronics.

Replacement Considerations

Cross-reference with other PNP BRTs featuring similar 4.7 kΩ/47 kΩ resistor values and -50 V/-100 mA ratings. Verify pinout compatibility and hFE ranges against alternatives such as the RN2304,LF or generic equivalents from other manufacturers before substitution.