RN2306,LXHF

Overview

The RN2306,LXHF is a PNP digital transistor from Toshiba Semiconductor and Storage, designed for automotive applications with AEC-Q101 qualification. It features a dual configuration in a US-6 (SOT-363) package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -0.1 A. The device integrates internal bias resistors with typical values of R1=4.7 kOhms and R2=47 kOhms. It offers a minimum DC current gain (hFE) of 80 and a power dissipation (Pd) of 200 mW, operating at temperatures up to +150 C.

Feature Summary

• Dual PNP digital transistor configuration with integrated bias resistors
• Automotive-grade reliability certified under AEC-Q101 standards
• Compact surface-mount packaging suitable for high-density circuits

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix against official Toshiba documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component meets AEC-Q101 requirements for your target automotive application. Cross-reference the datasheet for thermal derating curves relevant to the US-6 package. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing procurement.

Selection Notes

Select this component when a dual PNP digital transistor with built-in bias resistors is required for space-constrained designs. The US-6 package allows for compact layout compared to discrete resistor-transistor combinations. Verify that the -50 V rating and -0.1 A current capacity align with the load requirements. Consider the 200 mW power dissipation limit when designing for high-temperature environments or dense PCB layouts.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which integrate base resistors to simplify circuit design and reduce component count. The LXHF suffix typically indicates automotive-grade qualification and specific packaging variants within the broader RN family. These devices are engineered to replace multiple discrete components, enhancing reliability and reducing assembly time in complex electronic systems.

Replacement Considerations

Check for direct cross-references in distributor databases. Verify pinout compatibility and electrical parameter equivalence if substituting with other dual PNP digital transistors. Ensure any alternative maintains AEC-Q101 certification if used in automotive contexts.