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The RN2307,LF is a single PNP pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors to simplify circuit design. Key electrical parameters include a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. The device features a minimum DC current gain (hFE) of 80 at 10 mA and 5 V. Internal resistor values are R1 = 10 kΩ and R2 = 47 kΩ. It operates with a transition frequency of 200 MHz and a maximum power dissipation of 100 mW. The component is housed in an SC-70 surface-mount package.
Verify the specific ordering suffix and packaging configuration when sourcing. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Ensure the SC-70 package dimensions match your PCB footprint constraints. Cross-reference the manufacturer part number with authorized distributors to guarantee authenticity and traceability.
Select this component for designs requiring a compact PNP solution with integrated biasing. The SC-70 package offers space efficiency for dense layouts. Consider the 100 mA current rating and 50 V voltage limits against your load requirements. The fixed resistor ratio may limit flexibility compared to discrete resistor networks.
This component belongs to the RN23xx series of pre-biased transistors from Toshiba. These devices are designed as complementary counterparts to NPN types, such as the RN13xx series. The series emphasizes simplified circuit architecture by embedding necessary biasing components directly within the semiconductor package.
Public confirmed substitute part numbers were not identified in the provided documentation.