RN2307(TE85L,F)

Overview

The RN2307(TE85L,F) is a dual PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors in a compact surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA per channel. The device features a typical input resistance of 47 kOhms and a minimum DC current gain (hFE) of 70. It operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 200 mW.

Feature Summary

• Dual PNP configuration with integrated base resistors for simplified circuit design
• High breakdown voltage capability suitable for general switching applications
• Compact SMD packaging optimized for space-constrained PCB layouts

Applications

• General-purpose signal switching
• Driver circuits for low-power loads
• Logic level translation interfaces

Procurement Notes

Verify the specific ordering code suffix against the manufacturer's latest datasheet to confirm pinout and electrical tolerances. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.

Selection Notes

Select this component when a dual PNP digital transistor solution is required for switching applications. Consider the 47 kOhm internal resistor value for base drive compatibility. Verify that the -50 V voltage rating and -100 mA current capacity meet the load requirements. Check thermal constraints given the 200 mW power dissipation limit in the chosen package.

Part Context

This part belongs to Toshiba's RN series of digital transistors, which combine bipolar junction transistors with on-chip resistors. The TE85L suffix indicates a specific tape-and-reel packaging format designed for automated surface-mount assembly processes. This series is widely used in consumer electronics and industrial control systems.