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The RN2308,LF is a PNP Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP transistor with an internal bias resistor network within a compact surface-mount package. The device supports a collector-emitter voltage of 50V and a maximum collector current of 100mA. Internal resistance configurations include 22kΩ and 47kΩ options. The component operates at a maximum power dissipation of 100mW and is designed for general-purpose switching applications requiring simplified circuit design.
Verify the specific suffix designation to confirm the exact internal resistance value, as the base part number may correspond to different resistor combinations such as 22kΩ or 47kΩ. Ensure the ordering code matches the required package type and tape/reel specifications for automated assembly processes. Cross-reference the manufacturer's latest datasheet to confirm active status and compliance with current environmental standards before finalizing procurement.
Select this component when a compact solution for PNP switching with integrated biasing is required. Consider the internal resistance values to ensure proper base drive current for the intended load. Evaluate the thermal performance relative to the 100mW power dissipation limit in the target application environment. Confirm that the 50V voltage rating exceeds the maximum operating voltage of the circuit.
The RN2308 belongs to Toshiba's family of Bias Resistor Built-in Transistors (BRTs). These devices combine a bipolar junction transistor with one or two resistors on a single silicon chip. This integration simplifies circuit layout, reduces board space, and improves reliability by minimizing solder joints compared to discrete implementations.
Direct substitutes include other PNP BRTs with similar 50V ratings and 100mA current capacity in SOT-323 packages. Verify equivalent internal resistance values and pinout compatibility before substitution.