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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SC70
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
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Overview
The RN2308(TE85L,F) is a pre-biased NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two resistors into a single silicon epitaxial planar device, simplifying circuit design and reducing component count. The unit features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal biasing includes a base resistor (R1) of 4.7kΩ and an emitter resistor (R2) of 47kΩ. Packaged in the compact SMV (SOT-753) surface-mount format, it supports operation across a temperature range of -55°C to +150°C with a power dissipation rating of 300mW.
Feature Summary
- Integrates dual bias resistors within a single package to reduce external component requirements
- Utilizes ultra-super-mini SMV surface-mount packaging for space-constrained applications
- Designed for high-speed switching with a transition frequency of 200MHz
Applications
- Switching circuits requiring simplified bias networks
- Inverter logic interfaces
- Driver circuits for low-power loads
Procurement Notes
Verify the TE85L,F suffix confirms lead-free compliance and specific reel packaging specifications. Confirm the manufacturer designation as Toshiba Semiconductor and Storage to ensure authenticity. Validate RoHS status against current regulatory requirements before finalizing procurement orders.
Selection Notes
Select this component when a dual-resistor NPN configuration is required for interface or driver stages. Ensure the 50V breakdown voltage and 100mA current capacity meet the load requirements. Verify that the 4.7kΩ base resistance aligns with the target input impedance and drive current specifications.
Part Context
This part belongs to the RN series of pre-biased transistors from Toshiba. These devices are engineered to replace discrete transistor and resistor combinations. The SMV package variant offers a smaller footprint compared to standard SOT packages, facilitating higher density PCB layouts.
Replacement Considerations
Direct pin-compatible substitutes may include other manufacturers' NPN pre-biased transistors with identical 4.7kΩ/47kΩ resistor ratios and SMV packaging. Verify electrical parameters such as Vceo, Ic, and hFE match the original specifications before substitution.
