RN2309(TE85L,F)

$0.19

Description：TRANS PREBIAS PNP 50V 0.1A SC70
Series：-

SKU:dae1b1045eda Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS PNP 50V 0.1A SC70
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：PNP - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：47 kOhms
Resistor - Emitter Base (R2)：22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：200 MHz
Power - Max：100 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70

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RN2309(TE85L,F)

Overview

The RN2309(TE85L,F) is a pre-biased PNP transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with an internal base resistor within a compact surface-mount package. The device features a maximum power dissipation of 0.1 W, making it suitable for low-power switching applications. It operates with a continuous collector current of 100 mA and supports a collector-emitter voltage of -50 V. The component utilizes the USM (SMD-6) package format for efficient PCB integration.

Feature Summary

Integrates a PNP transistor with a built-in base resistor for simplified circuit design
Compact SMD-6 package footprint optimized for space-constrained layouts
Designed for low-power signal switching and logic interface applications

Applications

Logic level shifting between different voltage domains
General-purpose switching in consumer electronics
Interface circuits for microcontroller input/output ports

Procurement Notes

Verify the specific suffix TE85L,F against the official Toshiba datasheet to confirm tape-and-reel packaging specifications. Ensure the ordering part number matches the exact electrical characteristics required for the target application. Cross-reference the manufacturer's latest documentation to confirm RoHS compliance status and any recent product lifecycle changes before finalizing procurement orders.

Selection Notes

Select this component when a pre-biased PNP configuration is required to reduce external component count. The integrated resistor simplifies biasing networks compared to discrete transistors. Consider the 0.1 W power dissipation limit and the -50 V voltage rating to ensure adequate headroom for the specific operating conditions of the circuit design.

Part Context

This component belongs to Toshiba's line of pre-biased transistors, which combine active devices with passive resistors. These integrated solutions are designed to minimize board space and assembly complexity. The RN2309 specifically addresses applications needing reliable PNP switching with reduced peripheral components, fitting into broader systems requiring efficient signal management.