RN2310,LF

Overview

The RN2310,LF is a PNP Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP epitaxial type silicon transistor with an internal base resistor of 4.7 kΩ in an SOT-323 (USM) surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a cutoff frequency of 200 MHz and a minimum DC current gain (hFE) of 120 at Ic=1mA and Vce=5V. Power dissipation is rated at 100 mW.

Feature Summary

• Integrates a PNP transistor with a built-in 4.7 kΩ base resistor for simplified circuit design
• Utilizes SOT-323 surface-mount packaging for compact board space utilization
• Features high-speed operation with a 200 MHz cutoff frequency

Applications

• General-purpose switching circuits
• Logic level translation interfaces
• Driver stages for small-signal applications

Procurement Notes

Verify the specific ordering suffix to ensure compatibility with required tape-and-reel or cut-tape packaging formats. Confirm that the 4.7 kΩ internal resistance value aligns with the target biasing requirements of the application circuit. Ensure the SOT-323 footprint matches the PCB layout specifications before finalizing procurement orders.

Selection Notes

Select this component when a compact PNP solution with integrated base biasing is required. The 4.7 kΩ internal resistor eliminates external components, reducing bill of materials cost. Consider the 50 V voltage rating and 100 mA current limit to ensure adequate headroom for the specific load conditions.

Part Context

This part belongs to Toshiba's BRT family, which combines transistors with resistors to simplify driver circuit designs. The RN2310 variant specifically utilizes a PNP configuration suitable for low-side switching or pull-up applications where base current limiting is necessary.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Cross-reference pinout configurations and thermal characteristics when considering alternative manufacturers' BRT devices.