RN2310,LXHF

Overview

The RN2310,LXHF is a digital transistor array manufactured by Toshiba Semiconductor and Storage, featuring one PNP and one NPN pre-biased transistor pair. It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device integrates base resistors of 47kΩ for both the PNP and NPN elements, simplifying circuit design by eliminating external biasing components. With a transition frequency of 150MHz for the PNP and 200MHz for the NPN, it supports high-speed switching applications. The component is housed in a US6 surface-mount package and dissipates up to 200mW of power.

Feature Summary

• Integrated dual pre-biased configuration combining one PNP and one NPN transistor within a single compact package.
• Built-in base resistors eliminate the need for external biasing components, reducing board space and assembly complexity.
• AEC-Q101 qualified for automotive reliability standards, ensuring durability in demanding environments.

Applications

• Automotive interface circuits requiring reliable signal switching.
• General-purpose inverter and driver circuits in consumer electronics.
• Logic level shifting and buffer applications in low-power systems.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the procurement source provides valid traceability documentation for AEC-Q101 qualified parts intended for automotive use. Cross-reference the part number with the latest Toshiba Semiconductor and Storage catalogs to avoid obsolete or discontinued variants.

Selection Notes

Select this component when a complementary PNP/NPN pair with integrated biasing is required for space-constrained designs. The 47kΩ internal resistors suit standard logic interfaces; verify input voltage levels match the resistor values to ensure proper saturation. Consider the US6 package dimensions during PCB layout to maintain adequate clearance for thermal dissipation and soldering processes.

Part Context

The RN2310 belongs to Toshiba's RN series of bias resistor built-in transistors, designed to replace discrete BJT networks. This series offers consistent performance across temperature ranges and is widely used in portable devices and automotive modules where miniaturization and cost efficiency are critical design drivers.

Replacement Considerations

Consult official cross-reference lists for direct substitutes such as the RN2311 or RN2310 equivalents from other manufacturers. Verify that alternative parts match the 50V Vceo rating, 100mA Ic limit, and identical 47kΩ/47kΩ resistor configuration before implementation.