RN2310(TE85L,F)

$0.03

Description：TRANS PREBIAS PNP 50V 0.1A SC70
Series：-

SKU:353d274b6c00 Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS PNP 50V 0.1A SC70
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
Resistors Included：R1 Only
Transistor Type：PNP - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：4.7 kOhms
Resistor - Emitter Base (R2)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)：100nA (ICBO)
Frequency - Transition：200 MHz
Power - Max：100 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70

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RN2310(TE85L,F)

Overview

The RN2310(TE85L,F) is a PNP pre-biased digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with internal biasing resistors, housed in a compact USM (SOT-323/SC-70) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) rating of 100 mW. The device features a transition frequency (fT) of 200 MHz and a typical input resistance of 4.7 kOhms. It operates within a temperature range of -55°C to +150°C and complies with RoHS standards.

Feature Summary

Integrates PNP transistor with built-in biasing resistors for simplified circuit design
Compact USM (SOT-323) surface-mount package for space-constrained applications
High thermal stability with an extended operating temperature range up to 150°C
RoHS compliant construction suitable for environmentally conscious manufacturing

Applications

General-purpose switching circuits in consumer electronics
Level shifting and logic interface applications
Driver stages for low-power loads in portable devices
Battery-powered equipment requiring minimal component count

Procurement Notes

Verify the complete part number including the suffix (TE85L,F) to ensure correct packaging and lead-free compliance. Confirm that the required voltage and current ratings align with the specific application's operational limits. Check for RoHS certification status if environmental regulations apply. Ensure the SMD footprint matches the USM (SOT-323) land pattern in the PCB design. Validate supply chain authenticity through authorized distributors.

Selection Notes

Select this component when a single PNP switch with integrated base drive is required. The 50V rating suits low-voltage logic systems. Consider the 100mA current limit for load requirements. The USM package offers a small form factor compared to larger alternatives. Evaluate the 200MHz frequency response for high-speed switching needs. Compare against other pre-biased transistors if different resistor values or polarities are needed.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which combine discrete transistors with internal resistors to reduce board space and assembly costs. The RN2310 specifically utilizes a PNP configuration, contrasting with NPN variants like the RN2301. The TE85L,F suffix indicates the specific tape-and-reel packaging format and lead-free finish, distinguishing it from bulk or non-compliant versions.