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The RN2311,LF is a single PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a silicon epitaxial planar transistor with built-in bias resistors in an SC-70 surface-mount package. The device features a collector-emitter voltage of 50V and a maximum collector current of 100mA. Internal resistance values are R1 at 4.7kΩ and R2 at 10kΩ. Key electrical parameters include a DC current gain (hFE) of 120 minimum at 10mA/5V, a saturation voltage of 300mV max at 250µA/5mA, and a transition frequency of 200MHz. Power dissipation is rated at 100mW.
Verify the specific suffix LF for RoHS compliance status before procurement. Confirm the SC-70 package type matches the target PCB footprint. Ensure the manufacturer is identified as Toshiba Semiconductor and Storage to avoid confusion with legacy branding. Check datasheet revisions for any updates to absolute maximum ratings or thermal characteristics prior to finalizing supply chain agreements.
Select this component when a single PNP switching element with integrated base and emitter resistors is required. The 4.7kΩ base resistor value suits standard logic interface levels. Compare hFE and Vce(sat) requirements against load conditions. Consider the SC-70 package constraints for thermal management if operating near the 100mW power limit. Verify complementary NPN counterparts like RN1311 if push-pull configurations are needed.
The RN2311 belongs to Toshiba's family of pre-biased transistors designed to replace discrete resistor-transistor networks. It serves as the PNP counterpart to the RN1311 NPN version. These devices streamline manufacturing by reducing soldering steps and board space. The SC-70 packaging supports high-density assembly processes common in modern consumer electronics and portable devices.
Public confirmed substitute part numbers are not available in the provided documentation.