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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SC70
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
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Overview
The RN2311(TE85L,F) is a silicon NPN epitaxial type bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN transistor with a single internal bias resistor within a compact surface-mount package. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Typical input resistance is specified at 47 kΩ, with a minimum DC current gain (hFE) of 120. Power dissipation is rated at 200 mW, operating across a temperature range from -55°C to +150°C.
Feature Summary
- Integrates a bias resistor directly with the transistor to reduce component count and simplify circuit design.
- Utilizes PCT process technology for high-speed switching performance in digital applications.
- Designed for miniaturization through compact surface-mount packaging suitable for automated assembly.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific suffix TE85L,F against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with RoHS directives if required by the target market. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and supply chain integrity before procurement.
Selection Notes
Select this component when a single NPN switch with integrated base biasing is required to minimize board space. Compare the 47 kΩ typical resistance value against circuit requirements to ensure proper base drive current. Verify that the 200 mW power dissipation rating accommodates the thermal conditions of the final application environment.
Part Context
This component belongs to the RN series of bias resistor built-in transistors, designed to replace discrete transistor-resistor combinations. It serves as a complementary counterpart to PNP variants such as the RN2310. The TE85L,F suffix indicates a specific reel-based packaging format intended for high-volume surface-mount production lines.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Evaluate equivalent devices from other manufacturers only after verifying pinout compatibility, electrical parameter alignment, and package dimensions against the official RN2311 datasheet.
FAQ
What is the typical value of the built-in bias resistor?
The typical input resistance (R1) for the RN2311 is 47 kΩ.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 50 V.
Is this component suitable for high-temperature environments?
Yes, the junction temperature rating extends up to +150°C.
