RN2312(TE85L,F)

Overview

The RN2312(TE85L,F) is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with a common base input resistor (R1) into a single USM package. The device features a collector-emitter voltage rating of -50 V and a continuous collector current of -100 mA. The typical input resistance value for the RN2312 variant is 22 kΩ, with a minimum of 15.4 kΩ and a maximum of 28.6 kΩ. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 400 at -1 mA, and a transition frequency (fT) of 200 MHz.

Feature Summary

• Integrates dual PNP transistors with a common bias resistor to reduce component count and simplify circuit design.
• Utilizes a compact USM surface-mount package to facilitate equipment miniaturization.
• Designed for switching, inverter, interface, and driver circuits.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging type and tape specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the requested quantity aligns with standard manufacturing reel sizes or cut-tape availability through authorized distributors.

Selection Notes

Select the RN2312 when a dual PNP configuration with a 22 kΩ typical input resistance is required. Compare performance metrics such as hFE and fT against alternative digital transistors if higher gain or speed is needed. Consider the USM package dimensions for PCB layout constraints and verify thermal dissipation requirements relative to the 100 mW power rating.

Part Context

The RN2312 belongs to Toshiba's Bias Resistor Built-In Transistor family, designed to replace discrete resistor-transistor networks. It serves as a complementary component to other series within the product line, offering simplified design processes for mass production. The device leverages Toshiba's PCT process technology for reliable epitaxial transistor performance.

Replacement Considerations

Check for direct cross-references from other manufacturers offering dual PNP digital transistors with similar 22 kΩ input resistance and -50V ratings. Verify pinout compatibility and package footprint equivalence before substitution. Review datasheet electrical limits to ensure adequate margin for saturation voltage and current handling.

FAQ

What is the typical value of the built-in input resistor R1?

The typical value for the input resistor R1 in the RN2312 is 22 kΩ, with a specified range from 15.4 kΩ to 28.6 kΩ.

What is the transition frequency (fT) of the RN2312?

The transition frequency is typically 200 MHz, measured under conditions of VCE = -10 V and IC = -5 mA.

Can this component be used for high-reliability automotive applications?

No. Toshiba explicitly states that the product is not intended or warranted for use in equipment requiring extraordinarily high levels of quality and reliability, including automobiles, unless specifically stated otherwise.