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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SC70
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
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Overview
The RN2313,LF is a single PNP Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Electronic Devices & Storage Corporation. It integrates a silicon epitaxial type transistor with a built-in bias resistor of 47 kΩ nominal value. The device operates within a collector-emitter voltage range of -50 V and supports a continuous collector current of -100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 120 at -1 mA and a transition frequency (fT) of 200 MHz. Power dissipation is rated at 100 mW, with a maximum junction temperature of 150 °C. The component is housed in an SC-70 (SOT-323) surface-mount package.
Feature Summary
- Integrates a PNP transistor with a built-in 47 kΩ bias resistor to simplify circuit design.
- Reduces the quantity of external parts and manufacturing processes for equipment miniaturization.
- Utilizes a PCT process for high reliability and stable performance.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging details such as reel or cut tape quantities. Ensure compliance with environmental directives like RoHS before procurement. Confirm that the intended application does not fall under restricted categories defined in the product restrictions section of the datasheet.
Selection Notes
Select the RN2313,LF when a PNP digital transistor with a 47 kΩ internal base resistor is required. This model serves as the complementary counterpart to the NPN RN1313. Designers should verify that the 47 kΩ input resistance aligns with the logic drive requirements and that the -50 V voltage rating accommodates the maximum circuit voltages.
Part Context
The RN2313 belongs to the RN23xx series of Bias Resistor Built-in Transistors from Toshiba. These devices are designed to replace discrete transistor and resistor combinations, offering space savings on printed circuit boards. The series includes various resistance values to accommodate different interface standards and drive conditions.
Replacement Considerations
The RN1313 is documented as the complementary NPN equivalent within the same family. Verify pinout compatibility and polarity differences if substituting between NPN and PNP types in existing designs.
FAQ
What is the nominal value of the built-in bias resistor?
The nominal value of the built-in bias resistor for the RN2313 is 47 kΩ.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) rating is -50 V.
Does this component require external base resistors?
No, the RN2313 has a bias resistor built-in, eliminating the need for external base resistors in standard configurations.
