RN2313(TE85L,F)

Overview

The RN2313(TE85L,F) is a single PNP Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Electronic Devices & Storage Corporation. It integrates a silicon epitaxial transistor with an internal bias resistor, typically rated at 47 kΩ. The device operates within a collector-emitter voltage of -50 V and supports a continuous collector current of -100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 120 and a transition frequency (fT) of 200 MHz. Power dissipation is limited to 100 mW, with a maximum junction temperature of 150 °C. The component is housed in a USM (SC-70) surface-mount package.

Feature Summary

• Integrates a PNP transistor with a built-in bias resistor to simplify circuit design and reduce component count.
• Utilizes the PCT process for high reliability and consistent performance in switching applications.
• Designed for miniaturization through compact SC-70 packaging suitable for automated assembly.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L against the manufacturer's current documentation to confirm reel specifications and tape-and-reel dimensions. Ensure compliance with environmental directives such as RoHS by checking the latest product data sheets. Confirm that the intended operating conditions remain within the absolute maximum ratings provided in the official datasheet to maintain device reliability.

Selection Notes

Select the RN2313 when a PNP configuration with a 47 kΩ internal bias resistor is required. Compare its 200 MHz transition frequency and -50 V breakdown voltage against system requirements. Consider the RN2312 if a different resistance value is needed, or the RN2113MFV for automotive-grade AEC-Q101 qualification. Evaluate the 100 mW power dissipation limit relative to thermal management constraints in the target application.

Part Context

The RN2313 belongs to the RN23xx series of Bias Resistor Built-in Transistors from Toshiba. This series complements the NPN RN13xx family, providing matched pairs for push-pull or complementary logic designs. These devices are engineered to replace discrete transistor-resistor networks, thereby reducing board space and manufacturing complexity in consumer and industrial electronics.

Replacement Considerations

Publicly confirmed substitutes include the RN2312 for identical functionality with a different resistance value. For automotive applications requiring higher reliability standards, the RN2113MFV serves as a qualified alternative. Cross-reference pinouts and electrical parameters with any generic BRT replacements to ensure compatibility.