SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN2315TE85LF is a single PNP digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates a bias resistor within an SC-70 surface-mount package to reduce component count. The device features a typical input resistance of 2.2 kOhms with a resistor ratio of 0.22. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of -100 mA, and a power dissipation capacity of 100 mW. The DC current gain (hFE) has a minimum value of 50. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix TE85LF against official Toshiba documentation to confirm packaging type and compliance status. Ensure compatibility with existing PCB footprints for the SC-70 package. Confirm RoHS compliance requirements with the manufacturer's latest datasheet before finalizing procurement specifications.
Select this component when a single PNP digital transistor with a 2.2 kOhm base resistor is required. Verify that the 50 V collector-emitter voltage rating meets the circuit's maximum operating voltage. Ensure the 100 mA continuous current limit accommodates the load requirements without exceeding the 100 mW power dissipation threshold in the intended thermal environment.
This part belongs to the RN2315 series of bias resistor-built-in transistors from Toshiba. These devices are engineered to replace discrete transistor-resistor combinations, offering a standardized solution for switching applications. The TE85LF suffix indicates specific tape-and-reel packaging suitable for automated surface-mount assembly processes.
Consult official Toshiba cross-reference lists for verified substitutes. Generic equivalents may differ in hFE minimums or internal resistor tolerances. Validate pinout compatibility and thermal performance before substituting.