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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SC70
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：100 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70
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Overview
The RN2316,LF is a PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP epitaxial type silicon transistor with two internal bias resistors (R1 and R2) into an SC-70 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal resistance values are specified as 4.7 kOhms for the base resistor (R1) and 10 kOhms for the emitter-base resistor (R2). Key electrical characteristics include a DC current gain (hFE) minimum of 50 at 10mA/5V, a saturation voltage of 300mV max at 250µA/5mA, and a transition frequency of 200MHz. Maximum power dissipation is rated at 100mW.
Feature Summary
- Integrates a PNP transistor with dual bias resistors to simplify circuit design
- Reduces component count and manufacturing process complexity
- Suitable for switching, inverter, interface, and driver applications
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm package type and tape/reel specifications. Ensure compliance with RoHS3 standards and check moisture sensitivity level classifications prior to procurement. Confirm availability status directly with authorized distributors or the manufacturer.
Selection Notes
Select this component when a compact PNP solution with integrated biasing is required for space-constrained designs. Verify that the 4.7k/10k resistor ratio aligns with the target logic levels and drive requirements. Compare hFE and Vce(sat) parameters against load conditions to ensure adequate switching performance within the 100mA limit.
Part Context
This part belongs to the RN2xxx series of PNP bias resistor built-in transistors from Toshiba. It serves as a complementary counterpart to NPN variants like the RN1xxx series. The SC-70 packaging allows for high-density PCB layouts, making it suitable for modern portable electronics and compact industrial control modules requiring simplified bias networks.
Replacement Considerations
Publicly confirmed substitute part numbers for the RN2316,LF were not identified in the provided source material. Consult official Toshiba cross-reference guides or authorized distributor databases for verified equivalent components.
