RN2317(TE85L,F)

Overview

The RN2317(TE85L,F) is a PNP Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates a single PNP bipolar junction transistor with internal biasing resistors configured at 10 kΩ and 4.7 kΩ. The device operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical specifications include a DC current gain (hFE) ranging from 50 to 150, a transition frequency (fT) of 200 MHz, and a maximum power dissipation of 100 mW. It utilizes the USM-3 surface-mount package.

Feature Summary

• Integrates a PNP BJT with dual bias resistors for simplified circuit design
• Provides high-speed switching capability with a 200 MHz transition frequency
• Features low saturation voltage characteristics for efficient signal handling

Applications

• General-purpose logic interface circuits
• Driver stages for small-signal applications
• Switching elements in consumer electronics

Procurement Notes

Verify the specific suffix TE85L against the manufacturer's latest datasheet to confirm tape-and-reel packaging orientation and quantity. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the ordering code with official Toshiba distribution channels to avoid counterfeit parts. Confirm that the USM-3 footprint matches your PCB layout constraints before finalizing procurement.

Selection Notes

Select this component when a compact solution is required for driving loads or interfacing logic levels without external discrete resistors. The integrated bias network reduces board space and assembly steps compared to separate transistor-resistor configurations. Consider the 50V rating and 100mA current limit to ensure adequate headroom for the intended application load conditions.

Part Context

This part belongs to Toshiba's family of Bias Resistor Built-in Transistors (BRTs). These devices combine a single transistor with one or two resistors on a single chip, offering a cost-effective alternative to discrete resistor-transistor networks. The RN2317 specifically addresses applications requiring PNP switching with built-in base biasing.

Replacement Considerations

Direct substitutes may include other PNP BRTs with similar 50V/100mA ratings and comparable resistance values (10kΩ/4.7kΩ). Verify pinout compatibility and thermal performance when considering alternatives from other manufacturers.