SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN2318(TE85L,F) is a single PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a bipolar junction transistor with internal bias resistors within an SC-70 (SOT-323) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a transition frequency of 200 MHz. The device features a minimum DC current gain (hFE) of 50 at 10 mA and 5 V, with a maximum saturation voltage of 300 mV at specific base and collector currents. Power dissipation is rated at 100 mW, operating within a temperature range of -55°C to +150°C.
Verify the manufacturer designation as Toshiba Semiconductor and Storage when sourcing this component. Confirm the package type corresponds to SC-70 or SOT-323 to ensure mechanical compatibility. Check for RoHS compliance status in official documentation prior to integration into regulated assemblies.
Select this component for applications requiring a single PNP switch with integrated biasing. Ensure the required collector current does not exceed 100 mA and the voltage rating accommodates up to 50 V. Consider the 100 mW power dissipation limit and thermal management requirements for the SC-70 package during design.
This part belongs to Toshiba's RN series of digital transistors, which are designed to simplify circuit design by replacing discrete transistors and bias resistors with a single packaged unit. The TE85L suffix typically indicates specific tape-and-reel packaging configurations used for automated surface-mount assembly processes.
The maximum collector-emitter voltage (VCEO) is 50 V.
The transition frequency is specified as 200 MHz.
The minimum DC current gain is 50, measured at a collector current of 10 mA and a collector-emitter voltage of 5 V.