RN2401,LF

Overview

The RN2401,LF is a single PNP pre-biased bipolar junction transistor (BJT) manufactured by Toshiba Semiconductor and Storage. It integrates a PNP transistor with internal biasing resistors in an S-Mini surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a minimum DC current gain (hFE) of 50 at 10mA and 5V, with a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current. Internal resistors are specified as R1 = 47 kOhms and R2 = 10 kOhms. The transition frequency is rated at 200MHz, and the maximum power dissipation is 200mW.

Feature Summary

• Integrates a PNP transistor with dual biasing resistors for simplified circuit design
• Provides high-speed switching capabilities with a 200MHz transition frequency
• Offers low saturation voltage to minimize power loss during conduction
• Utilizes compact S-Mini surface-mount packaging for space-constrained applications

Applications

• General-purpose switching circuits requiring integrated biasing
• Driver stages for logic interfaces
• Signal amplification in RF applications

Procurement Notes

Verify the manufacturer part number RN2401,LF against official Toshiba Semiconductor and Storage documentation to confirm availability and specifications. Ensure the component meets RoHS3 compliance requirements if applicable to your project standards. Cross-reference datasheet parameters such as hFE and Vce(sat) with your specific circuit design needs before procurement.

Selection Notes

Select the RN2401,LF when a single PNP pre-biased transistor is required for high-speed switching or amplification. Verify that the 50V breakdown voltage and 100mA current rating exceed your circuit's maximum operating conditions. Confirm that the internal resistor values (R1=47kΩ, R2=10kΩ) align with your biasing requirements without external components.

Part Context

The RN2401,LF belongs to Toshiba's RN series of pre-biased transistors, which integrate resistors directly onto the silicon die to reduce board space and assembly time. This series includes various configurations of NPN and PNP transistors with different resistor values and package options, catering to diverse electronic design needs.

Replacement Considerations

Publicly confirmed substitute part numbers for the RN2401,LF were not identified in the provided source material. Consult official Toshiba documentation or authorized distributors for verified equivalent components.