SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN2402,LF is a single NPN pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates an NPN transistor with built-in bias resistors in a compact surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a typical transition frequency of 250MHz and a maximum power dissipation of 200mW. Internal bias resistors are typically configured with R1 at 10kΩ and R2 at 10kΩ. The component is designed for high-speed switching applications, offering simplified circuit design by reducing the external component count required for base drive networks.
Verify the specific ordering suffix and tape/reel configuration when sourcing. Confirm that the received components match the RN2402,LF designation and manufacturer markings. Check datasheet revisions for any updates to absolute maximum ratings or thermal characteristics prior to integration into final designs.
Select this component when a single NPN pre-biased transistor is required for high-frequency switching. Ensure the 50V Vceo and 100mA Ic limits accommodate the load requirements. Compare internal resistor values against the target base drive calculations to verify compatibility with the driving logic levels.
This part belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with integrated biasing networks. These devices are engineered to replace discrete resistor-transistor combinations, thereby minimizing footprint and assembly complexity in modern electronic systems requiring reliable signal switching.
Consult official substitution guides for compatible equivalents. Verify pinout compatibility and electrical parameter alignment before replacing existing components in production assemblies.