RN2402S,LF(D

Overview

The RN2402S,LF(D) is a pre-biased NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an NPN bipolar junction transistor with internal bias resistors in a compact surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. The device features a DC current gain (hFE) of at least 50 at Ic=10mA and Vce=5V. Internal resistor values are typically 10 kOhms for both the base (R1) and emitter (R2) connections. The component operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 200 mW.

Feature Summary

• Integrated biasing network eliminates external resistor requirements for simplified circuit design.
• High-speed switching capability suitable for high-frequency applications up to 250 MHz transition frequency.
• Compact S-Mini (TO-236-3/SC-59/SOT-23-3) package facilitates automated surface-mount assembly.

Applications

• Switching circuits in portable electronic devices
• Driver stages for logic interfaces
• Level shifting applications in embedded systems

Procurement Notes

Verify the specific suffix 'D' against official Toshiba documentation to confirm if it denotes a specific tape-and-reel quantity or packaging variant distinct from the standard 'LF' designation. Ensure the ordering part number matches the exact mechanical dimensions and marking code required for your PCB layout. Cross-reference with authorized distributors to confirm availability of the specific suffix configuration.

Selection Notes

Select this component when a compact NPN pre-biased transistor is required for low-power switching applications. The 50V rating and 100mA current capacity suit general-purpose signal switching. Verify that the 10kOhm internal resistor values align with the driving source impedance and desired base current requirements for the target application load.

Part Context

The RN2402 series belongs to Toshiba's family of pre-biased transistors designed to replace discrete BJT and resistor networks. These components reduce board space and assembly costs by integrating the transistor and biasing resistors into a single package. The RN2402 specifically provides an NPN configuration with defined internal resistance ratios for predictable switching performance.

Replacement Considerations

Direct substitutes may include other manufacturers' NPN pre-biased transistors with identical pinouts and similar electrical ratings (50V, 100mA). Verify compatibility of the internal resistor ratio and hFE characteristics before substitution. Common alternatives often follow similar naming conventions but require careful verification of the package outline and thermal resistance parameters.