RN2403,LF

RN2403,LF

$0.16
  • Description:TRANS PREBIAS PNP 50V 0.1A SMINI
  • Series:-

SKU:71b58eefca9c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SMINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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RN2403,LF

Overview

The RN2403,LF is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single US6 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 10mA and 5V, with a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current. Transition frequencies are rated at 200MHz for the NPN and 250MHz for the PNP element. Maximum power dissipation is specified at 200mW.

Feature Summary

  • Integrates complementary NPN and PNP transistors into a single compact surface-mount package to reduce component count.
  • Includes built-in bias resistors to simplify circuit design and minimize external component requirements.
  • Provides high-speed switching capabilities with transition frequencies up to 250MHz.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications against the manufacturer's latest datasheet before procurement. Confirm that the US6 package dimensions align with the target PCB footprint. Ensure compliance with RoHS3 standards if required by the end application. Check for any obsolescence notices or lifecycle status updates directly from Toshiba Semiconductor and Storage.

Selection Notes

Select this component when a complementary pair of pre-biased transistors is required in a small form factor. The RN2403,LF is suitable for applications needing both NPN and PNP switching functions with integrated biasing. Compare the 200mW power dissipation limit against thermal constraints. Verify that the 50V breakdown voltage meets the circuit's operating requirements.

Part Context

The RN2403 belongs to Toshiba's RN series of pre-biased BJT arrays. This series offers various configurations of NPN and PNP combinations in different packages. The RN2403 specifically provides a mixed NPN/PNP configuration. It is part of a broader family designed to replace discrete resistor-transistor networks in digital logic and interface applications.

Replacement Considerations

Publicly confirmed substitute part numbers for the RN2403,LF were not found in the provided source material. Cross-reference with other manufacturers' complementary pre-biased transistor arrays only after verifying pinout compatibility and electrical parameter equivalence through official datasheets.

RN2403,LFRN2403,LF
$0.16
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