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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SMINI
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：S-Mini
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Overview
The RN2404,LF is a single pre-biased PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates built-in bias resistors to simplify circuit design. The device features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. It is housed in an SOT-23 surface-mount package with a maximum power dissipation of 400 mW. The component includes a base resistor (R1) and an emitter resistor (R2), maintaining a built-in bias resistor ratio of 1.
Feature Summary
- Integrates built-in bias resistors for simplified circuit design
- Single PNP configuration with minimal external components
- Designed for switching, inverter, interface, and driver applications
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the production line.
Selection Notes
Select this component when a single PNP pre-biased transistor is required in an SOT-23 package. Ensure the application demands a 50V collector-emitter voltage rating and a 100mA continuous collector current capability. Verify that the integrated bias resistor ratio meets the specific drive requirements.
Part Context
This part belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with internal biasing networks. These devices are designed to reduce board space and assembly costs by eliminating external resistors typically needed for transistor biasing in digital logic and signal processing applications.
Replacement Considerations
Direct substitutes may include other single PNP pre-biased transistors in SOT-23 packages from various manufacturers, provided they match the 50V/100mA ratings and pinout configuration. Cross-referencing datasheets for hFE and saturation voltage is recommended.
