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The RN2404TE85LF is a single PNP digital transistor with a built-in bias resistor, manufactured by Toshiba Semiconductor and Storage. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. The device operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 400 mW. The DC current gain (hFE) is specified at a minimum of 80. It is housed in an SOT-23 package.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm that the requested part number matches the exact electrical characteristics and package type required for the design. Cross-reference the manufacturer product code with authorized distributor listings to validate authenticity and availability status before finalizing procurement orders.
Select this component when a single PNP digital transistor with integrated biasing is required for compact designs. Ensure the 50V voltage rating and 100mA current capacity meet the circuit requirements. Verify that the SOT-23 package dimensions are compatible with the PCB layout constraints and that the thermal performance supports the intended power dissipation levels in the application environment.
This component belongs to Toshiba's line of bias resistor built-in transistors, which integrate resistors directly onto the silicon die or within the package to simplify circuit design. These devices are engineered to replace discrete transistor-resistor combinations, thereby reducing board space and assembly costs while maintaining consistent electrical performance across production batches.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official documentation for recommended alternatives or cross-reference with equivalent single PNP digital transistors offering similar voltage, current, and package specifications.