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The RN2407,LF is a pre-biased NPN digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates an epitaxial planar silicon NPN transistor with bias resistors in a single surface-mount package. Key electrical parameters include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a minimum DC current gain (hFE) of 80 at 10mA and 5V, with a saturation voltage of 300mV max at 250µA base current and 5mA collector current. Internal bias resistors are typically 10kΩ for R1 and 47kΩ for R2. The transition frequency is rated at 250MHz, with a maximum power dissipation of 200mW.
Verify the specific suffix against official Toshiba documentation to confirm exact packaging configuration and RoHS compliance status. Confirm availability through authorized distributors as standard lead times may vary. Ensure the ordering part number matches the required resistor values and package type specified in the datasheet.
Select this component when a compact NPN digital transistor solution is required for logic interfacing or level shifting. Verify that the 50V rating and 100mA current capacity meet the load requirements. Compare internal resistor ratios against application needs to ensure proper biasing without external components.
The RN2407,LF belongs to Toshiba's RN series of pre-biased transistors. This series combines bipolar junction transistors with integrated bias networks to replace multiple discrete components. The LF suffix indicates lead-free construction compliant with environmental directives.
Check for direct equivalents such as the RN1707 if pinout compatibility is required. Verify that substitute devices match the 50V Vceo, 100mA Ic, and 250MHz fT specifications. Ensure internal resistor values are compatible with the existing circuit design.