RN2409,LF

RN2409,LF

$0.14
  • Description:TRANS PREBIAS PNP 50V 0.1A SMINI
  • Series:-

SKU:23baba2acb14 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SMINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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RN2409,LF

Overview

The RN2409,LF is a single PNP epitaxial silicon pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a built-in bias resistor network to simplify circuit design. The device features a collector-emitter voltage of 50V, a maximum collector current of 100mA, and a transition frequency of 200MHz. Internal resistors are configured with R1 at 47kΩ and R2 at 22kΩ. Power dissipation is rated at 200mW, and the component utilizes an S-Mini (TO-236MOD/SC-59) surface-mount package.

Feature Summary

  • Integrates dual bias resistors to reduce external component count
  • Designed for switching, inverter, interface, and driver circuits
  • Provides complementary functionality within the RN1407 to RN1409 series

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against official distributor catalogs to ensure correct packaging configuration. Confirm RoHS compliance status and moisture sensitivity level prior to finalizing procurement orders. Cross-reference datasheet revision dates to ensure alignment with current manufacturing specifications.

Selection Notes

Select this component when a PNP pre-biased transistor with a 47kΩ base resistor and 22kΩ emitter resistor is required. Ensure the application operates within the 50V collector-emitter voltage limit and 100mA current threshold. Verify that the S-Mini package dimensions fit the target PCB layout constraints.

Part Context

This part belongs to the RN2407 through RN2409 family of PNP pre-biased transistors. These devices serve as complementary counterparts to the NPN RN1407 to RN1409 series. They share identical electrical ratings and physical packages but differ in internal resistor configurations to support various logic interface requirements.

Replacement Considerations

RN2408,LF

FAQ

What are the values of the built-in resistors?

The RN2409 includes a base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 22 kΩ.

Is this device suitable for high-frequency applications?

Yes, the device has a transition frequency (fT) of 200 MHz, making it suitable for high-speed switching and interface applications.

What is the maximum power dissipation rating?

The maximum collector power dissipation is 200 mW at an ambient temperature of 25°C.

RN2409,LFRN2409,LF
$0.14
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