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The RN2409,LF is a single PNP epitaxial silicon pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a built-in bias resistor network to simplify circuit design. The device features a collector-emitter voltage of 50V, a maximum collector current of 100mA, and a transition frequency of 200MHz. Internal resistors are configured with R1 at 47kΩ and R2 at 22kΩ. Power dissipation is rated at 200mW, and the component utilizes an S-Mini (TO-236MOD/SC-59) surface-mount package.
Verify the specific ordering suffix against official distributor catalogs to ensure correct packaging configuration. Confirm RoHS compliance status and moisture sensitivity level prior to finalizing procurement orders. Cross-reference datasheet revision dates to ensure alignment with current manufacturing specifications.
Select this component when a PNP pre-biased transistor with a 47kΩ base resistor and 22kΩ emitter resistor is required. Ensure the application operates within the 50V collector-emitter voltage limit and 100mA current threshold. Verify that the S-Mini package dimensions fit the target PCB layout constraints.
This part belongs to the RN2407 through RN2409 family of PNP pre-biased transistors. These devices serve as complementary counterparts to the NPN RN1407 to RN1409 series. They share identical electrical ratings and physical packages but differ in internal resistor configurations to support various logic interface requirements.
RN2408,LF
The RN2409 includes a base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 22 kΩ.
Yes, the device has a transition frequency (fT) of 200 MHz, making it suitable for high-speed switching and interface applications.
The maximum collector power dissipation is 200 mW at an ambient temperature of 25°C.