RN2412,LF

RN2412,LF

$0.03
  • Description:PB-F S-MINI PLN (LF) TRANSISTOR
  • Series:-

SKU:7b8064525a2b Category: Brand:

  
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Product Detailed Parameters

  • Description:PB-F S-MINI PLN (LF) TRANSISTOR
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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RN2412,LF

Overview

The RN2412,LF is a single NPN pre-biased bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device features a minimum DC current gain (hFE) of 120 at 10 mA and 5 V. Internal resistors are specified as R1 = 10 kOhms and R2 = 10 kOhms. The saturation voltage is maximized at 300 mV under specific base and collector currents. Power dissipation is rated at 200 mW with a transition frequency of 200 MHz. It utilizes an S-Mini (TO-236-3/SC-59/SOT-23-3) surface-mount package.

Feature Summary

  • Integrates built-in bias resistors to reduce component count and simplify manufacturing processes.
  • Provides complementary functionality to the RN1412 model within the same product family.
  • Designed for switching, inverter, interface, and driver circuit applications.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the manufacturer part number RN2412,LF against official Toshiba Semiconductor and Storage documentation to confirm specifications. Ensure compatibility with the S-Mini package footprint during PCB layout. Check RoHS compliance status and moisture sensitivity level requirements before integration into production assemblies.

Selection Notes

Select this component when a single NPN pre-biased transistor with a 50 V rating and 100 mA current capacity is required. The integrated resistor values of 10 kOhms each suit standard logic interface levels. Consider the complementary RN1412 if PNP polarity is needed instead. Verify thermal management capabilities for the 200 mW power dissipation limit in the target application environment.

Part Context

This component belongs to the Toshiba digital transistor series, which combines bipolar transistors with internal bias resistors. These devices are engineered to replace discrete transistor-resistor networks, thereby saving board space and assembly time. The RN2412 specifically serves as the NPN counterpart in designs requiring simplified biasing solutions for small-signal applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official distributor databases or Toshiba engineering support for verified cross-reference options that match the electrical and mechanical specifications.

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