SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN2412(TE85L,F) is a digital transistor manufactured by Toshiba Semiconductor and Storage, featuring an integrated NPN bipolar junction transistor paired with a built-in bias resistor. Designed for surface-mount applications in the compact SC-74A (SOT-753) package, this component simplifies circuit design by reducing external part counts. It supports a maximum collector current of 100mA and withstands a collector-emitter voltage of up to 50V. The device incorporates a 4.7 kΩ base resistor and delivers a minimum DC current gain (hFE) of 120 at 10mA with 5V applied. Operating within a temperature range of -55°C to +150°C, it offers reliable performance for switching and interface circuits.
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging configuration. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before finalizing procurement plans.
Select this component when a single NPN digital transistor with a 4.7 kΩ base resistor is required. Ensure the 50V voltage rating and 100mA current capacity align with the target circuit requirements. Verify that the SC-74A package dimensions fit the available PCB real estate.
This part belongs to the RN series of digital transistors from Toshiba, which are designed to replace discrete resistor-transistor networks. These devices are commonly used in consumer electronics and industrial control systems where board space is limited and manufacturing efficiency is prioritized through reduced component counts.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the same NPN configuration, 4.7 kΩ resistance value, and compatible pinout to avoid redesign efforts.