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Product Detailed Parameters
- Description：PB-F S-MINI PLN (LF) TRANSISTOR
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：S-Mini
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Overview
The RN2413,LF is a single PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a built-in bias resistor network to simplify circuit design. The device features a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical parameters include a minimum DC current gain (hFE) of 50 at 10mA and 5V, and a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current. The transition frequency is rated at 200MHz with a maximum power dissipation of 200mW. It is housed in an S-Mini (SC-59/SOT-23-3) surface-mount package.
Feature Summary
- Integrates built-in bias resistors to reduce component count and simplify manufacturing processes.
- Designed for switching, inverter, interface, and driver circuits.
- Provides complementary functionality to the RN1413 NPN pre-biased transistor.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the assembly process.
Selection Notes
Select this component when a PNP logic-level interface or switching application requires integrated base drive. Ensure the required hFE and saturation voltage meet the load conditions. Verify that the S-Mini package footprint aligns with the PCB layout constraints.
Part Context
This part belongs to the RN series of pre-biased transistors from Toshiba. These devices combine bipolar junction transistors with internal resistors to replace discrete transistor-resistor combinations. The RN2413 specifically serves as the PNP counterpart to the RN1413, facilitating push-pull or complementary configurations.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Toshiba cross-reference guides for verified alternatives.
