RN2413TE85LF

RN2413TE85LF

$0.21
  • Description:TRANS PREBIAS PNP 50V 0.1A SMINI
  • Series:-

SKU:5e2edccdca46 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V 0.1A SMINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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RN2413TE85LF

Overview

The RN2413(TE85L,F) is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in an SMV (SOT-753) surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA per element. Each transistor includes a base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 47 kΩ. Key electrical characteristics include a DC current gain (hFE) of at least 120 at 10mA and 5V, a saturation voltage of 300mV max at 250µA base current and 5mA collector current, and a transition frequency of 200MHz. The total power dissipation is rated at 300mW.

Feature Summary

  • Integrates two NPN transistors with dual bias resistors to simplify circuit design
  • Reduces component count and assembly costs compared to discrete solutions
  • Optimized for high-speed switching applications with a 200MHz transition frequency

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the complete part number including the suffix (TE85L,F) to ensure correct packaging and lead-free compliance. Confirm the specific distributor ordering code matches the manufacturer's designation. Check availability status as supply chain conditions may vary. Ensure the procurement source provides valid traceability documentation for quality assurance purposes.

Selection Notes

Select this component when a compact dual NPN solution with integrated biasing is required. The 47kΩ resistor values are suitable for standard logic interface levels. Consider the 300mW power dissipation limit for thermal management. Verify that the SOT-753 footprint fits the PCB layout constraints. Compare against single-transistor alternatives if only one channel is needed to optimize board space.

Part Context

This part belongs to Toshiba's RN series of digital transistors, which are designed to replace multiple discrete components. The TE85L suffix indicates tape and reel packaging. The 'LF' denotes lead-free composition. This series is widely used in consumer electronics and industrial control systems where space saving and simplified manufacturing processes are critical priorities.

Replacement Considerations

Publicly confirmed substitute part numbers were not found in the provided reference data. Engineers should consult official Toshiba documentation or authorized distributors for verified cross-reference information before implementing any alternative components.

RN2413TE85LFRN2413TE85LF
$0.21
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