RN2414(TE85L,F)

$0.20

Description：TRANS PREBIAS PNP 50V SMINI
Series：-

SKU:d21232205cce Category: Single, Pre-Biased Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS PNP 50V SMINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：PNP - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：1 kOhms
Resistor - Emitter Base (R2)：10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：200 MHz
Power - Max：200 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：S-Mini

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RN2414(TE85L,F)

Overview

The RN2414(TE85L,F) is a dual digital transistor manufactured by Toshiba Semiconductor and Storage, housed in an ESV-5 surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design. The device features a collector-emitter voltage (Vceo) of 50 V and a continuous collector current (Ic) of 100 mA. Typical input resistance values are 47 kΩ for the first transistor and 10 kΩ for the second. Power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

Integrates dual NPN transistors with pre-configured internal bias resistors to reduce external component count.
Designed for high-speed switching applications with a maximum operating frequency of 250 MHz.
Utilizes a compact ESV-5 surface-mount package suitable for space-constrained PCB layouts.

Applications

General-purpose switching circuits
Driver circuits for logic interfaces
Level shifting between different voltage domains

Procurement Notes

Verify the specific ordering code against official Toshiba Semiconductor and Storage documentation to ensure correct suffix identification. Confirm RoHS compliance status through the manufacturer's latest product environmental declaration. Cross-reference datasheet revisions to validate electrical parameters before finalizing procurement specifications.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for signal switching or driving loads. Ensure the 50 V collector-emitter voltage rating exceeds the maximum circuit voltage. Verify that the 100 mA continuous current capability meets the load requirements and that the ESV-5 package fits the available board space constraints.

Part Context

This part belongs to Toshiba's RN series of digital transistors, which combine bipolar junction transistors with on-chip resistors. The ESV-5 package variant offers a small footprint compared to larger SMD packages, making it suitable for dense consumer electronics and portable devices requiring multiple switching elements.