RN2416,LF

Overview

The RN2416,LF is a single PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates a PNP epitaxial planar silicon transistor with two internal resistors (R1 and R2) within an S-Mini (SC-59/SOT-23-3) surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50V, a maximum collector current of 100mA, and a transition frequency of 200MHz. The device features a minimum DC current gain (hFE) of 50 at 10mA and 5V, with a maximum Vce saturation voltage of 300mV at specified base and collector currents. Internal resistance values are typically 47kΩ for R1 and 10kΩ for R2. The component supports a maximum power dissipation of 200mW and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Integrates a PNP transistor with dual bias resistors to simplify circuit design and reduce component count.
• Utilizes the PCT process for high reliability and stable performance in switching applications.
• Available in a compact S-Mini surface-mount package suitable for space-constrained designs.

Applications

• Switching circuits requiring simplified drive interfaces.
• Inverter circuits for logic level translation.
• Interface circuits between microcontrollers and peripheral devices.
• Driver circuits for low-power loads.

Procurement Notes

Verify the specific suffix (e.g., LF, TE85L, F) against the manufacturer's official datasheet to confirm pinout compatibility and resistance values, as variations exist within the RN24xx family. Ensure the ordering part number matches the required packaging format such as tape and reel or cut tape. Confirm RoHS compliance status if restricted substances are a constraint for the target assembly process.

Selection Notes

Select the RN2416,LF when a PNP configuration with integrated biasing is required for interface or switching tasks. Compare the internal resistor ratios against other models like the RN2418 or RN2412 to ensure proper base drive current for the specific load. Verify that the 50V breakdown voltage and 100mA current rating exceed the maximum operating conditions of the application circuit to maintain safety margins.

Part Context

The RN2416 belongs to Toshiba's RN24xx series of Bias Resistor Built-In Transistors (BRTs). This series is designed to replace discrete transistor and resistor combinations, thereby reducing board space and assembly costs. The RN2416 specifically provides a PNP solution, complementing NPN variants like the RN2412 and RN2413 within the same product family.

Replacement Considerations

Direct substitutes within the same family include the RN2412 (NPN) or RN2413 (NPN) if polarity inversion is acceptable. For identical PNP functionality but different resistance values, consider the RN2418 or RN2419. Cross-manufacturer equivalents should be verified for pinout compatibility and electrical parameter matching.

FAQ

What are the typical internal resistance values for the RN2416?

The RN2416 typically incorporates a base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 10 kΩ.

What is the maximum power dissipation for this component?

The maximum power dissipation is rated at 200 mW at an ambient temperature of 25°C.

Is the RN2416 available in a through-hole package?

No, the RN2416 is designed exclusively for surface-mount installation in the S-Mini (SC-59/SOT-23-3) package.