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The RN2417(TE85L,F) is a PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN transistor with internal bias resistors in a compact surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (Vceo) of 50 V, a continuous collector current (Ic) of 100 mA, and a power dissipation (Pd) of 200 mW. The device features a typical input resistance of 4.7 kΩ and supports a maximum operating frequency of 200 MHz. It is housed in the SOT-23-3 (TO-236-3/SC-59) package.
Verify the specific suffix TE85L,F to ensure compatibility with tape-and-reel handling requirements. Confirm that the 50 V breakdown voltage and 100 mA current limits align with the target application's peak operational stresses. Cross-reference the thermal dissipation characteristics against the PCB copper area available for heat spreading.
Select this component when a PNP configuration with integrated biasing is required to reduce external component count. The 200 MHz frequency rating makes it suitable for faster digital signals compared to standard low-frequency transistors. Ensure the 200 mW power dissipation capability meets the thermal constraints of the final assembly environment.
This part belongs to Toshiba's RN series of pre-biased transistors, which combine discrete transistors with on-chip resistors. The RN2417 specifically utilizes a PNP structure within the SOT-23-3 footprint, offering a balance between current handling capacity and switching speed for embedded control applications.
Direct substitutes may include other PNP pre-biased transistors in SOT-23-3 packages with similar 50 V and 100 mA ratings, such as the BC847 series variants or equivalent parts from other manufacturers providing identical pinout and electrical specifications.