RN2417(TE85L,F)

RN2417(TE85L,F)

$0.20
  • Description:TRANS PREBIAS PNP 50V SMINI
  • Series:-

SKU:fe21c3acf9bb Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SMINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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RN2417(TE85L,F)

Overview

The RN2417(TE85L,F) is a PNP pre-biased transistor manufactured by Toshiba Semiconductor and Storage. It integrates a single NPN transistor with internal bias resistors in a compact surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (Vceo) of 50 V, a continuous collector current (Ic) of 100 mA, and a power dissipation (Pd) of 200 mW. The device features a typical input resistance of 4.7 kΩ and supports a maximum operating frequency of 200 MHz. It is housed in the SOT-23-3 (TO-236-3/SC-59) package.

Feature Summary

  • Integrates a PNP transistor with built-in bias resistors for simplified circuit design
  • Optimized for high-speed switching applications with a 200 MHz operating frequency
  • Compact SOT-23-3 surface-mount package suitable for space-constrained designs

Applications

  • General-purpose switching circuits
  • Driver stages for logic interfaces
  • Signal level translation

Procurement Notes

Verify the specific suffix TE85L,F to ensure compatibility with tape-and-reel handling requirements. Confirm that the 50 V breakdown voltage and 100 mA current limits align with the target application's peak operational stresses. Cross-reference the thermal dissipation characteristics against the PCB copper area available for heat spreading.

Selection Notes

Select this component when a PNP configuration with integrated biasing is required to reduce external component count. The 200 MHz frequency rating makes it suitable for faster digital signals compared to standard low-frequency transistors. Ensure the 200 mW power dissipation capability meets the thermal constraints of the final assembly environment.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which combine discrete transistors with on-chip resistors. The RN2417 specifically utilizes a PNP structure within the SOT-23-3 footprint, offering a balance between current handling capacity and switching speed for embedded control applications.

Replacement Considerations

Direct substitutes may include other PNP pre-biased transistors in SOT-23-3 packages with similar 50 V and 100 mA ratings, such as the BC847 series variants or equivalent parts from other manufacturers providing identical pinout and electrical specifications.

RN2417(TE85L,F)RN2417(TE85L,F)
$0.20
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